AM2306NE these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds(on) m( ? )i d (a) 58 @ v gs = 10v 3.5 82 @ v gs = 4.5v 3.0 product summary 30 ?low r ds(on) provides higher efficiency and extends battery life ? miniature sot-23 surface mount package saves board space ? high power and current handling capability ? low side high current dc-dc converter applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol limit units v ds 30 v gs 20 t a =25 o c3.5 t a =70 o c2.8 i dm 16 i s 1.25 a t a =25 o c1.3 t a =70 o c0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 10 sec 100 o c/ w steady-state 166 o c/w thermal resistance ratings parame te r maximum junction-to-ambient a r ja esd protected 2000v sot-23 top view d s g d g n-channel mosfet s product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d ( on ) v ds = 5 v, v gs = 10 v 6 a v gs = 10 v, i d = 3.5 a 58 v gs = 4.5 v, i d = 3 a 82 forward tranconductance a g fs v ds = 15 v, i d = 3.5 a 6.9 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.8 v total gate charge q g 2.2 gate-source charge q g s 0.5 gate-drain charge q gd 0.8 turn-on delay time t d ( on ) 16 rise time t r 5 turn-off delay time t d ( off ) 23 fall-time t f 3 drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = 25 v, r l = 25 ? , i d = 1 a, v gen = 10 v ns v ds = 15 v, v gs = 4.5 v, i d = 3.5 a nc dynamic b ua i dss zero gate voltage drain current static test conditions symbol AM2306NE product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
